US Patent Issued to Hefei Kaimeng Technology on Sept. 8 for "Memory control method, memory storage device and memory control circuit unit" (Chinese Inventors)

ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,730,566, issued on Sept. 8, was assigned to Hefei Kaimeng Technology Co. Ltd. (Anhui, China).

"Memory control method, memory storage device and memory control circuit unit" was invented by Jian Hu (Anhui, China), Xin Wang (Anhui, China), Tsung-Lin Wu (Anhui, China), Qiao Zhu (Anhui, China) and Chong Peng (Anhui, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed are a memory control method, a memory storage device, and a memory control circuit unit. The method is used in a memory storage device including a rewritable non-volatile memory module. The rewritable non-volatile memory module includes virtual management units, each virtual manageme...