US Patent Issued to HEFECHIP on March 3 for "Methods for fabricating magnetoresistive random access memory with via under MJT" (Taiwanese, American Inventors)

ALEXANDRIA, Va., March 3 -- United States Patent no. 12,568,768, issued on March 3, was assigned to HEFECHIP CORPORATION LIMITED (Hong Kong).

"Methods for fabricating magnetoresistive random access memory with via under MJT" was invented by Wei-Chuan Chen (Scarsdale, N.Y.), Hong-Hui Hsu (Zhubei, Taiwan), Chih-Yuan Lee (Taoyuan, Taiwan) and Yiheng Xu (Clifton Park, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Methods for fabricating a magnetoresistive random access memory are disclosed. In this method, an MTJ stack is formed over a lower metal layer on a semiconductor substrate, and a first etching is then performed to form an MTJ component and to expose a portion of a bottom electrode layer or via ben...