ALEXANDRIA, Va., May 5 -- United States Patent no. 12,618,169, issued on May 5, was assigned to HANWHA SOLUTIONS Corp. (Seoul, South Korea) and HANWHA Corp. (Seoul, South Korea).
"Ingot growing apparatus" was invented by Keun Ho Kim (Seoul, South Korea), Kyung Seok Lee (Seoul, South Korea) and Jin Sung Park (Seoul, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "An ingot growing apparatus is disclosed. An ingot growing apparatus according to an aspect of the present invention comprises a growth furnace for growing an ingot, and a main crucible which is accommodated in the growth furnace and accommodates molten silicon, wherein the main crucible comprises: a main crucible bottom portion; a main cru...