US Patent Issued to HANWHA SOLUTIONS, HANWHA on May 26 for "Intake/exhaust device of apparatus for continuously growing silicon ingot" (South Korean Inventors)

ALEXANDRIA, Va., May 26 -- United States Patent no. 12,637,785, issued on May 26, was assigned to HANWHA SOLUTIONS Corp. (Seoul, South Korea) and HANWHA Corp. (Seoul, South Korea).

"Intake/exhaust device of apparatus for continuously growing silicon ingot" was invented by Young Min Lee (Seoul, South Korea), Kyung Seok Lee (Seoul, South Korea) and Han Woong Jeon (Seoul, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "An intake/exhaust device of an apparatus for growing a silicon ingot includes: a chamber of which an inside is maintained in a vacuum atmosphere, and which includes a first section having a main crucible in a center thereof so that an ingot grows therein, and a second section having, o...