ALEXANDRIA, Va., July 15 -- United States Patent no. 12,662,753, issued on June 23, was assigned to HANWHA SOLUTIONS Corp. (Seoul, South Korea) and HANWHA Corp. (Seoul, South Korea).

"Ingot growing apparatus" was invented by Keun Ho Kim (Seoul, South Korea), Kyung Seok Lee (Seoul, South Korea), Jin Sung Park (Seoul, South Korea) and Young Jun Lee (Seoul, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed is an ingot growing apparatus. An ingot growing apparatus according to an embodiment of the present invention includes a growth furnace in which a main crucible is disposed, wherein the main crucible accommodates molten silicon and is rotated clockwise or counterclockwise to rotate the molt...