ALEXANDRIA, Va., June 2 -- United States Patent no. 12,644,181, issued on June 2, was assigned to Hansol Chemical Co. Ltd. (Seoul, South Korea).

"Composition, precursor composition including same, and method of manufacturing thin film using same precursor composition" was invented by Kyu-Hyun Yeom (Wanju-gun, South Korea), Ki-Yeung Mun (Wanju-gun, South Korea), Dae-Won Ryu (Wanju-gun, South Korea) and Jang-Hyeon Seok (Sejong-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "Proposed is a vapor deposition precursor composition that enables thin film deposition through vapor deposition. Specifically, proposed is a novel composition applicable to atomic layer deposition (ALD) or chemical vapor depo...