US Patent Issued to Hangzhou Hualan Microelectronique on Sept. 8 for "Mechanisms for destroying storage devices" (Chinese Inventors)

ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,730,907, issued on Sept. 8, was assigned to Hangzhou Hualan Microelectronique Co. Ltd. (Zhejiang, China).

"Mechanisms for destroying storage devices" was invented by Wenkui Wang (Hangzhou, China), Hang Tao (Hangzhou, China) and Jianjun Luo (Hangzhou, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Techniques to provide a storage device such as solid-state drive (SSD) with mechanisms for destroying the stored data therein. To achieve such data destruction, this application provides a destruction mechanism that generates heat high enough to break down some or all of the storing media in the device until the data stored in the device can no longer be ...