US Patent Issued to HAMAMATSU PHOTONICS on Sept. 1 for "Photodetection device, semiconductor photodetection element, and method for driving semiconductor photodetection element" (Japanese Inventors)

ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,270, issued on Sept. 1, was assigned to HAMAMATSU PHOTONICS K.K. (Shizuoka, Japan).

"Photodetection device, semiconductor photodetection element, and method for driving semiconductor photodetection element" was invented by Shinya Iwashina (Hamamatsu, Japan), Shunsuke Adachi (Hamamatsu, Japan), Shigeyuki Nakamura (Hamamatsu, Japan), Terumasa Nagano (Hamamatsu, Japan) and Ryutaro Tsuchiya (Hamamatsu, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Each of a plurality of cells includes at least one avalanche photodiode. A light projecting unit is arranged to project light having a cross-sectional shape whose longitudinal direction corresponds to a...