US Patent Issued to HAMAMATSU PHOTONICS on Oct. 27 for "Photodetection element and method for manufacturing photodetection element" (Japanese Inventors)

ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,777,738, issued on Oct. 27, was assigned to HAMAMATSU PHOTONICS K.K. (Hamamatsu, Japan).

"Photodetection element and method for manufacturing photodetection element" was invented by Kazutoshi Nakajima (Hamamatsu, Japan), Hiroyasu Fujiwara (Hamamatsu, Japan) and Wei Dong (Hamamatsu, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A photodetection element includes an N-type silicon layer formed in a single crystal state, a P-type germanium-containing layer formed in a polycrystal state and forming a hetero PN junction between the germanium-containing layer and the silicon layer, a first electrode electrically connected to the silicon layer, and a sec...