ALEXANDRIA, Va., March 24 -- United States Patent no. 12,588,299, issued on March 24, was assigned to HAMAMATSU PHOTONICS K.K. (Hamamatsu, Japan).
"Semiconductor light reception element" was invented by Keiki Taguchi (Hamamatsu, Japan), Hajime Ishihara (Hamamatsu, Japan), Yoshiaki Ohshige (Hamamatsu, Japan) and Kenji Makino (Hamamatsu, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor light receiving element includes: a substrate; a semiconductor stacked portion that is formed on a first region of the substrate; and a first electrode and a second electrode that are electrically connected to the semiconductor stacked portion. Te semiconductor stacked portion includes: a light absorption lay...