US Patent Issued to HAMAMATSU PHOTONICS on June 9 for "Method for manufacturing photodetector, and photodetector" (Japanese Inventors)

ALEXANDRIA, Va., June 9 -- United States Patent no. 12,652,867, issued on June 9, was assigned to HAMAMATSU PHOTONICS K.K. (Hamamatsu, Japan).

"Method for manufacturing photodetector, and photodetector" was invented by Ryosuke Okumura (Hamamatsu, Japan), Yuki Yoshida (Hamamatsu, Japan) and Yoshinori Tsukada (Hamamatsu, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for manufacturing a light detection device includes a first process of preparing a semiconductor wafer having a first main surface and a second main surface, a second process of providing a first support substrate on the first main surface, a third process of cutting the semiconductor wafer and the first support substrate in a state...