ALEXANDRIA, Va., April 15 -- United States Patent no. 12,603,134, issued on April 14, was assigned to Greenliant IP LLC (Santa Clara, Calif.).

"NOR memory cell with floating gate" was invented by Bing Yeh (Los Altos Hills, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "An electrically erasable programmable nonvolatile memory cell includes a semiconductor substrate having a bit line region, a surface region apart from the bit line region in a lateral direction, and a trench region apart from the surface region in the lateral direction, the trench region comprising a bottom portion and a sidewall portion adjacent a trench in the semiconductor substrate; an electrically conductive control gate; an electr...