US Patent Issued to GREE ELECTRIC APPLICANCES INC. OF ZHUHAI, EDGELESS SEMICONDUCTOR Co. LTD. OF ZHUHAI on Nov. 3 for "Cell structure of semiconductor device, preparation method thereof and semiconductor device" (Chinese Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,326, issued on Nov. 3, was assigned to GREE ELECTRIC APPLICANCES INC. OF ZHUHAI (Zhuhai, China) and EDGELESS SEMICONDUCTOR Co. LTD. OF ZHUHAI (Zhuhai, China).

"Cell structure of semiconductor device, preparation method thereof and semiconductor device" was invented by Yiren Lin (Zhuhai, China), Bo Shi (Zhuhai, China) and Ting Xiao (Zhuhai, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed are a cell structure of a semiconductor device, a preparation method thereof and a semiconductor device. The cell structure includes: a substrate of a first conductive type; at least one first trench gate, at least one second trench gate, at least one t...