US Patent Issued to GOOGLE on March 17 for "Indium gallium nitride light emitting diodes with reduced strain" (California Inventor)

ALEXANDRIA, Va., March 17 -- United States Patent no. 12,581,773, issued on March 17, was assigned to GOOGLE LLC (Mountain View, Calif.).

"Indium gallium nitride light emitting diodes with reduced strain" was invented by Aurelien Jean Francois David (San Francisco).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of forming an LED emitter includes: providing a III-nitride layer on a substrate (310), the III-nitride layer having a planar top surface; providing discrete lateral growth regions on the top surface; selectively epitaxially growing, on each discrete lateral growth region, a base region (1210) comprising an In(x)Ga(1-x)N material, each extending perpendicular to the top surface; providing surf...