US Patent Issued to GlobalWafers on Sept. 22 for "Modeling thermal donor formation and target resistivity for single crystal silicon ingot production" (Missouri Inventors)

ALEXANDRIA, Va., Sept. 24 -- United States Patent no. 12,742,256, issued on Sept. 22, was assigned to GlobalWafers Co. Ltd. (Hsinchu, Taiwan).

"Modeling thermal donor formation and target resistivity for single crystal silicon ingot production" was invented by Carissima Marie Hudson (St. Charles, Mo.), JaeWoo Ryu (Chesterfield, Mo.) and Michael Robbin Seacrist (Lake St. Louis, Mo.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Methods for producing single crystal silicon ingots are disclosed. The methods may involve modeling formation of thermal donors and target resistivity during downstream annealing processes such as during subsequent device manufacturing such as manufacturing of interposer devices. The m...