US Patent Issued to GlobalWafers on Sept. 1 for "Single crystal ingot puller with high-power laser beam as auxiliary heating source" (Missouri Inventors)

ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,723,324, issued on Sept. 1, was assigned to GlobalWafers Co. Ltd. (Hsinchu, Taiwan).

"Single crystal ingot puller with high-power laser beam as auxiliary heating source" was invented by Vahid Klalajzadeh (O'Fallon, Mo.) and Sumeet S. Bhagavat (St. Charles, Mo.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A single crystal ingot puller includes a crucible for containing a melt. A single crystal ingot is grown from the melt. A laser system selectively transmits a laser beam to the ingot edge. A controller selectively controls power of the laser to heat the ingot edge such that a local temperature of the edge region is increased."

The patent was filed on...