US Patent Issued to GlobalWafers on Oct. 6 for "Si ingot single crystal" (Taiwanese Inventors)

ALEXANDRIA, Va., Oct. 6 -- United States Patent no. 12,753,525, issued on Oct. 6, was assigned to GlobalWafers Co. Ltd. (Hsinchu, Taiwan).

"Si ingot single crystal" was invented by Kazuo Nakajima (Hsinchu, Taiwan), Masami Nakanishi (Hsinchu, Taiwan), Yu Sheng Su (Hsinchu, Taiwan) and Wen-Ching Hsu (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for producing Si ingot single crystal by NOC growth method including a Si ingot single crystal growing step and a continuous growing step is provided. The growing step includes providing a low temperature region in the Si melt where the Si ingot single crystal is grown along the surface of the Si melt or toward the inside of the Si melt, and t...