US Patent Issued to GlobalWafers on March 17 for "System and methods for a radiant heat cap in a semiconductor wafer reactor" (Taiwanese Inventors)

ALEXANDRIA, Va., March 17 -- United States Patent no. 12,581,571, issued on March 17, was assigned to GlobalWafers Co. Ltd. (Hsinchu, Taiwan).

"System and methods for a radiant heat cap in a semiconductor wafer reactor" was invented by Chieh Hu (Chiayi, Taiwan), Chun-Chin Tu (Zhubei City, Taiwan) and Lunghsing Hsu (Hsinchu City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A reaction apparatus contacts a process gas on a semiconductor wafer during a wafering process. The semiconductor wafer defines a center region. The reaction apparatus includes an upper dome, a lower dome, a shaft, and a cap. The lower dome is attached to the upper dome, and the upper dome and the lower dome define a reaction cham...