ALEXANDRIA, Va., July 15 -- United States Patent no. 12,663,259, issued on June 23, was assigned to GlobalWafers Co. Ltd. (Hsinchu, Taiwan).
"Full wafer thickness map reflectometry" was invented by Benno Orschel (Frontenac, Mo.).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method of measuring a thickness of a semiconductor structure includes illuminating the semiconductor structure with the incoherent, uncollimated light from at least one light source, and capturing, using a camera, at least one image of the semiconductor structure illuminated by the light from the light source. The at least one image includes separate first color, second color, and third color images, the first, second, and third colors ...