US Patent Issued to GlobalWafers on April 7 for "Systems and methods for producing a single crystal silicon ingot using a vaporized dopant" (Missouri Inventors)

ALEXANDRIA, Va., April 7 -- United States Patent no. 12,595,584, issued on April 7, was assigned to GlobalWafers Co. Ltd. (Hsinchu, Taiwan).

"Systems and methods for producing a single crystal silicon ingot using a vaporized dopant" was invented by Yu-Chiao Wu (Frontenac, Mo.), William Lynn Luter (St. Charles, Mo.), Richard J. Phillips (St. Peters, Mo.) and James Dean Eoff (Montgomery City, Mo.).

According to the abstract* released by the U.S. Patent & Trademark Office: "An ingot puller for producing a doped single crystal silicon ingot includes a housing defining a chamber, a crucible disposed within the chamber, and a dopant injector attached to and extending into the housing. The chamber is maintained at a first pressure. The dopant in...