US Patent Issued to GlobalWafers, mRadian Femto Sources on April 7 for "Amorphous phase modification apparatus and processing method of single crystal material" (Taiwanese Inventors)

ALEXANDRIA, Va., April 7 -- United States Patent no. 12,594,630, issued on April 7, was assigned to GlobalWafers Co. Ltd. (Hsinchu, Taiwan) and mRadian Femto Sources Co. Ltd. (Hsinchu City, Taiwan).

"Amorphous phase modification apparatus and processing method of single crystal material" was invented by Shang-Chi Wang (Hsinchu, Taiwan), Chia-Chi Tsai (Hsinchu, Taiwan), I-Ching Li (Hsinchu, Taiwan), Chien Chung Lee (Hsinchu, Taiwan) and Bo-Kai Wang (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A processing method of a single crystal material includes the following steps. A single crystal material is provided as an object to be modified. The amorphous phase modification apparatus is used for ...