US Patent Issued to GlobalFoundries U.S. on Sept. 8 for "Chip including silicon device and III-V semiconductor device on III-V semiconductor layer" (Vermont Inventors)

ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,262, issued on Sept. 8, was assigned to GlobalFoundries U.S. Inc. (Malta, N.Y.).

"Chip including silicon device and III-V semiconductor device on III-V semiconductor layer" was invented by Steven M. Shank (Jericho, Vt.), Richard J. Rassel (Essex Junction, Vt.) and John J. Ellis-Monaghan (Grand Isle, Vt.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed semiconductor structures include a stack of III-V semiconductor layers and a III-V semiconductor device and a silicon device on the stack. The III-V semiconductor device includes, among other components, a barrier layer above and immediately adjacent to a III-V semiconductor surface at the top ...