US Patent Issued to GlobalFoundries U.S. on Sept. 29 for "Stress-reduction structures for a compound semiconductor layer stack" (Vermont Inventors)

ALEXANDRIA, Va., Sept. 30 -- United States Patent no. 12,751,327, issued on Sept. 29, was assigned to GlobalFoundries U.S. Inc. (Malta, N.Y.).

"Stress-reduction structures for a compound semiconductor layer stack" was invented by Brett Cucci (Colchester, Vt.), Ramsey Hazbun (Colchester, Vt.), Richard Rassel (Essex Junction, Vt.), Zhong-Xiang He (Essex Junction, Vt.) and Patrick Mitchell (Essex Junction, Vt.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Structures including a compound semiconductor layer stack and methods of forming such structures. The structure comprises a device region on a substrate. The device region includes a first section of a layer stack that has a plurality of semiconductor layers,...