US Patent Issued to GlobalFoundries U.S. on Sept. 1 for "Memory cell including dual-antifuse device, memory structure, and operating method" (Indian, American Inventors)

ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,157, issued on Sept. 1, was assigned to GlobalFoundries U.S. Inc. (Malta, N.Y.).

"Memory cell including dual-antifuse device, memory structure, and operating method" was invented by Ramesh Raghavan (Bangalore, India), Bipul C. Paul (Mechanicville, N.Y.) and Thirunavukkarasu Ranganathan (Bangalore, India).

According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed is a memory cell including a dual-antifuse device between a first pass-gate transistor and a second pass-gate transistor. The dual-antifuse device includes first and second antifuses having a common terminal and each also having an additional terminal opposite the common terminal. The first pas...