US Patent Issued to GLOBALFOUNDRIES U.S. on Nov. 3 for "Word line charge pump circuit and memory device including the same" (Indian Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,784,825, issued on Nov. 3, was assigned to GLOBALFOUNDRIES U.S. Inc. (Malta, N.Y.).

"Word line charge pump circuit and memory device including the same" was invented by Siva Kumar Chinthu (Bangalore, India) and P Sundar Veerendranath (Bangalore, India).

According to the abstract* released by the U.S. Patent & Trademark Office: "A word line charge pump circuit of a memory device includes a clock driver configured to drive a clock signal using a first voltage and output a buffered clock signal with a swing level corresponding to a level of the first voltage, and a charge pump configured to receive a bit line voltage and generate a word line voltage by boosting the bit line voltage using...