US Patent Issued to GlobalFoundries U.S. on Nov. 3 for "Semiconductor fin with divots, transistor including the semiconductor fin, memory cell including the transistor, and associated methods" (New York Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,243, issued on Nov. 3, was assigned to GlobalFoundries U.S. Inc. (Malta, N.Y.).

"Semiconductor fin with divots, transistor including the semiconductor fin, memory cell including the transistor, and associated methods" was invented by Meixiong Zhao (Ballston Lake, N.Y.), Hongliang Shen (Ballston Lake, N.Y.) and Randy William Mann (Milton, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed semiconductor structures include semiconductor fin(s), each extending from a semiconductor substrate and having opposing sidewalls. Each fin has a lower portion and an upper portion above the lower portion. The lower portion has a base proximal to the semi...