US Patent Issued to GLOBALFOUNDRIES U.S. on Nov. 3 for "High electron mobility transistor" (Vermont Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,405, issued on Nov. 3, was assigned to GLOBALFOUNDRIES U.S. Inc. (Malta, N.Y.).

"High electron mobility transistor" was invented by Brett T. Cucci (Colchester, Vt.), Jacob M. DeAngelis (Burlington, Vt.), Spencer H. Porter (Colchester, Vt.), Trevor S. Wills (South Burlington, Vt.) and Mark D. Levy (Williston, Vt.).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure relates to semiconductor structures and, more particularly, to high electron mobility transistors and methods of manufacture. The structure includes: a semiconductor substrate; a gate structure on the semiconductor substrate; a gate metal connecting to the gate structure; a...