US Patent Issued to GLOBALFOUNDRIES U.S. on March 24 for "Integrated structure with trap rich regions and low resistivity regions" (Vermont, New York Inventors)

ALEXANDRIA, Va., March 24 -- United States Patent no. 12,588,282, issued on March 24, was assigned to GLOBALFOUNDRIES U.S. Inc. (Malta, N.Y.).

"Integrated structure with trap rich regions and low resistivity regions" was invented by Vibhor Jain (Williston, Vt.), Crystal R. Kenney (Waterford, N.Y.) and John J. Pekarik (Underhill, Vt.).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure relates to semiconductor structures and, more particularly, to a substrate with trap rich and low resistivity regions and methods of manufacture. The structure includes: a high resistivity semiconductor substrate; an active device over the high resistivity semiconductor substrate; and a low resistivity region f...