ALEXANDRIA, Va., March 17 -- United States Patent no. 12,581,746, issued on March 17, was assigned to GlobalFoundries U.S. Inc. (Malta, N.Y.).

"Silicon-controlled rectifiers for electrostatic discharge protection" was invented by Vishal Ganesan (Dresden, Germany), Prantik Mahajan (Dresden, Germany), Nandha Kumar Subramani (Dresden, Germany) and Souvick Mitra (Essex Junction, Vt.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Structures for a silicon-controlled rectifier and methods of forming a structure for a silicon-controlled rectifier. The structure comprises a first well and a second well in a semiconductor substrate, a first terminal including a first doped region in the first well, and a second termin...