ALEXANDRIA, Va., March 17 -- United States Patent no. 12,581,701, issued on March 17, was assigned to GLOBALFOUNDRIES U.S. Inc. (Malta, N.Y.).
"Device with dual isolation structure" was invented by Richard J. Rassel (Essex Junction, Vt.), Johnatan A Kantarovsky (South Burlington, Vt.), Zhong-Xiang He (Essex Junction, Vt.), Mark D. Levy (Williston, Vt.) and Michel J. Abou-Khalil (Essex Junction, Vt.).
According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure relates to semiconductor structures and, more particularly, to a semiconductor device with a dual isolation structure and methods of manufacture. The structure includes: a dual isolation structure including semiconductor material; and an active ...