US Patent Issued to GlobalFoundries U.S. on July 28 for "Structure including transistor using buried insulator layer as gate dielectric and trench isolations in source and drain" (German, American Inventors)

ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,538, issued on July 28, was assigned to GlobalFoundries U.S. Inc. (Malta, N.Y.).

"Structure including transistor using buried insulator layer as gate dielectric and trench isolations in source and drain" was invented by Tom Herrmann (Dresden, Germany), Zhixing Zhao (Dresden, Germany), Alban Zaka (Dresden, Germany) and Yiching Chen (San Jose, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A structure including a semiconductor-on-insulator (SOI) substrate including a semiconductor-on-insulator (SOI) layer over a buried insulator layer over a base semiconductor layer. The structure further includes a first field effect transistor (FET) adjacent ...