US Patent Issued to GlobalFoundries U.S. on July 28 for "High-electron-mobility transistors with active blocks" (Belgian Inventors)

ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,473, issued on July 28, was assigned to GlobalFoundries U.S. Inc. (Malta, N.Y.).

"High-electron-mobility transistors with active blocks" was invented by Abhinay Sandupatla (Leuven, Belgium) and Bartlomiej Jan Pawlak (Leuven, Belgium).

According to the abstract* released by the U.S. Patent & Trademark Office: "Structures for a high-electron-mobility transistor and methods of forming such structures. The structure comprises a device structure that includes a gate and an ohmic contact, and one or more active blocks that are laterally positioned between the gate and the ohmic contact. The one or more active blocks are configured to receive a supply voltage that is different from grou...