US Patent Issued to GlobalFoundries U.S. on July 28 for "Field-effect transistors with self-aligned p-shield contacts" (California Inventor)

ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,481, issued on July 28, was assigned to GlobalFoundries U.S. Inc. (Malta, N.Y.).

"Field-effect transistors with self-aligned p-shield contacts" was invented by Francois Hebert (San Mateo, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Structures for a field-effect transistor and methods of forming a structure for a field-effect transistor. The structure comprises a semiconductor substrate including a first doped region, a second doped region, a third doped region, and a trench that includes a trench bottom, a first sidewall, and a second sidewall opposite to the first sidewall. The first doped region is disposed adjacent to the first sidewall...