US Patent Issued to GlobalFoundries U.S. on July 21 for "Heterojunction bipolar transistors including an intrinsic base with an asymmetrical dopant depth profile" (German, American Inventors)

ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,206, issued on July 21, was assigned to GlobalFoundries U.S. Inc. (Malta, N.Y.).

"Heterojunction bipolar transistors including an intrinsic base with an asymmetrical dopant depth profile" was invented by Alexander Derrickson (Saratoga Springs, N.Y.), Halid Mulaosmanovic (Dresden, Germany), Peter Baars (Dresden, Germany), Judson R. Holt (Ballston Lake, N.Y.) and Zhixing Zhao (Dresden, Germany).

According to the abstract* released by the U.S. Patent & Trademark Office: "Structures for a heterojunction bipolar transistor and methods of forming a structure for a heterojunction bipolar transistor. The structure comprises a first semiconductor layer including a first portion, a second ...