US Patent Issued to GlobalFoundries U.S. on July 14 for "Structure with buried doped region for coupling source line contact to gate structure of memory cell" (German Inventors)

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,684,767, issued on July 14, was assigned to GlobalFoundries U.S. Inc. (Malta, N.Y.).

"Structure with buried doped region for coupling source line contact to gate structure of memory cell" was invented by Ralf Richter (Dresden, Germany), Stefan Dunkel (Dresden, Germany) and Violetta Sessi (Dresden, Germany).

According to the abstract* released by the U.S. Patent & Trademark Office: "The disclosure provides a structure with a buried doped region for coupling a source line contact to the gate structure of a memory cell. A structure according to the disclosure includes a memory cell having a gate structure extending in a first lateral direction over a substrate. A buried doped region is ...