US Patent Issued to GlobalFoundries U.S. on July 14 for "Gate structure on intrinsic base layer and overhanging lateral sidewall of intrinsic base layer" (American, Indian Inventors)

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,684,841, issued on July 14, was assigned to GlobalFoundries U.S. Inc. (Malta, N.Y.).

"Gate structure on intrinsic base layer and overhanging lateral sidewall of intrinsic base layer" was invented by Alexander M. Derrickson (Saratoga Springs, N.Y.), Hong Yu (Clifton Park, N.Y.), Judson Robert Holt (Ballston Lake, N.Y.), Andreas Knorr (Saratoga Springs, N.Y.), Vibhor Jain (Clifton Park, N.Y.), Jeffrey Bowman Johnson (North Hero, Vt.), Alexander L. Martin (Greenfield Center, N.Y.) and Jhnanesh Somayaji (Bangalore, India).

According to the abstract* released by the U.S. Patent & Trademark Office: "A structure including a first emitter-collector (E/C) layer over a substrate. The structure...