US Patent Issued to GLOBALFOUNDRIES U.S. on July 14 for "Field plated bidirectional HEMT structure" (Vermont, New York, Texas Inventors)

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,684,866, issued on July 14, was assigned to GLOBALFOUNDRIES U.S. Inc (Malta, N.Y.).

"Field plated bidirectional HEMT structure" was invented by Santosh Sharma (Austin, Texas), Michael J. Zierak (Colchester, Vt.), Mark D. Levy (Williston, Vt.) and Steven J. Bentley (Menands, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure relates to semiconductor structures and, more particularly, to a bidirectional device, methods of manufacture and methods of operation. The structure includes: a first gate structure adjacent to a first source region; a second gate structure adjacent to a second source region; and field plates adjacent to the ...