ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,483, issued on April 14, was assigned to GlobalFoundries U.S. Inc. (Malta, N.Y.).
"Magnetic memory devices for differential sensing" was invented by Johannes Mueller (Dresden, Germany).
According to the abstract* released by the U.S. Patent & Trademark Office: "A magnetic memory device is provided. The magnetic memory device includes a first magnetic tunnel junction (MTJ) stack, a second MTJ stack, and a spin-orbit torque (SOT) electrode. The second MTJ stack is adjacent to the first MTJ stack. The SOT electrode is connected to the first MTJ stack and the second MTJ stack, wherein the SOT electrode has a first electrode section along a first axis and a second electrode section a...