ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,777,661, issued on Oct. 27, was assigned to GLOBALFOUNDRIES Singapore Pie. Ltd. (Singapore).
"Capacitor structures of semiconductor devices" was invented by Xinshu Cai (Singapore) and Shyue Seng Tan (Singapore).
According to the abstract* released by the U.S. Patent & Trademark Office: "A capacitor structure is provided. The capacitor structure includes a substrate, a first electrode, a second electrode, and a third electrode. The first electrode is in the substrate. The second electrode is over the substrate. The third electrode is over the second electrode and includes a middle portion over the second electrode and end portions laterally adjacent to the second electrode."
The pate...