US Patent Issued to GlobalFoundries Singapore on Sept. 8 for "Single-photon avalanche diodes with hybrid trench isolation structures" (Singaporean Inventors)

ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,267, issued on Sept. 8, was assigned to GlobalFoundries Singapore Pte. Ltd. (Singapore).

"Single-photon avalanche diodes with hybrid trench isolation structures" was invented by Ping Zheng (Singapore), Eng Huat Toh (Singapore), Kiok Boone Elgin Quek (Singapore), Soh Yun Siah (Singapore) and Shiang Yang Ong (Singapore).

According to the abstract* released by the U.S. Patent & Trademark Office: "Structures for a single-photon avalanche diode and methods of forming a structure for a single-photon avalanche diode. The structure comprises a semiconductor layer on a semiconductor substrate, a cathode comprising a first doped region in the semiconductor substrate, and an anode comprisin...