US Patent Issued to GlobalFoundries Singapore on June 23 for "Deep trench isolation structures for a single-photon avalanche diode" (Singaporean Inventors)

ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,726, issued on June 23, was assigned to GlobalFoundries Singapore Pte. Ltd. (Singapore).

"Deep trench isolation structures for a single-photon avalanche diode" was invented by Ping Zheng (Singapore), Eng Huat Toh (Singapore) and Kiok Boone Elgin Quek (Singapore).

According to the abstract* released by the U.S. Patent & Trademark Office: "Structures for a single-photon avalanche diode and methods of forming a structure for a single-photon avalanche diode. The structure comprises a semiconductor layer on a top surface of a semiconductor substrate, a light-absorbing layer on a first portion of the semiconductor layer, a dielectric layer on a second portion of the semiconductor layer...