US Patent Issued to GLOBALFOUNDRIES SINGAPORE on June 16 for "Galvanic isolation using isolation break between redistribution layer electrodes" (Singaporean Inventors)

ALEXANDRIA, Va., June 16 -- United States Patent no. 12,660,257, issued on June 16, was assigned to GLOBALFOUNDRIES SINGAPORE PTE. LTD. (Singapore).

"Galvanic isolation using isolation break between redistribution layer electrodes" was invented by Bong Woong Mun (Singapore), Wanbing Yi (Singapore), Juan Boon Tan (Singapore) and Jeoung Mo Koo (Singapore).

According to the abstract* released by the U.S. Patent & Trademark Office: "A structure includes a galvanic isolation including a horizontal portion including a first redistribution layer (RDL) electrode in a first insulator layer, and a second RDL electrode in the first insulator layer laterally spaced from the first RDL electrode. An isolation break includes a trench defined in the firs...