ALEXANDRIA, Va., July 7 -- United States Patent no. 12,677,484, issued on July 7, was assigned to GLOBALFOUNDRIES Singapore Pte. Ltd. (Singapore).
"Single-photon avalanche diodes" was invented by Francesco Gramuglia (Munich), Eng Huat Toh (Singapore) and Kiok Boone Elgin Quek (Singapore).
According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure relates to semiconductor structures and, more particularly, to single-photon avalanche diodes and methods of manufacture. The structure includes: a first deep trench structure in a semiconductor substrate having a conductive material and a material of a first polarity; a second deep trench structure in the semiconductor substrate surrounding the first deep ...