US Patent Issued to GlobalFoundries Singapore on July 14 for "Semiconductor devices including an air gap adjacent to an interconnect structure and methods of forming the same" (Singaporean Inventor)

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,685,143, issued on July 14, was assigned to GlobalFoundries Singapore Pte. Ltd. (Singapore).

"Semiconductor devices including an air gap adjacent to an interconnect structure and methods of forming the same" was invented by Anthony Jeremy Villalon (Singapore).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device may include a first interlayer dielectric (ILD) over a substrate and a second ILD over the first ILD. An interconnect structure may be in the first ILD and the second ILD. The interconnect structure includes a conductive line on a via portion. An air gap may be arranged below the conductive line and between the via portion and the...