ALEXANDRIA, Va., July 16 -- United States Patent no. 12,672,362, issued on June 30, was assigned to Georgia Tech Research Corp. (Atlanta).
"Avalanche photodiodes" was invented by Patrick Stephen Goley (Atlanta) and John D. Cressler (Atlanta).
According to the abstract* released by the U.S. Patent & Trademark Office: "An exemplary embodiment of the present disclosure provides an avalanche photodiode (APD), comprising: a p-doped substrate; a first n-doped region; an n-doped epitaxial region; a plurality of n-doped wells; and a first p-doped region. The first n-doped region can be positioned above at least a portion of the p-doped substrate. The n-doped epitaxial region can be positioned above at least a portion of the first n-doped region. ...