US Patent Issued to Genettice (Qingdao) Semiconductor Materials on Nov. 3 for "Enhanced GaN-based HEMT device, device epitaxy, and preparation methods thereof" (Chinese Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,397, issued on Nov. 3, was assigned to Genettice (Qingdao) Semiconductor Materials Co. Ltd. (Qingdao City, China).

"Enhanced GaN-based HEMT device, device epitaxy, and preparation methods thereof" was invented by Wang Ma (Qingdao, China), Long Chen (Qingdao, China), Jingyun Cheng (Qingdao, China), Zuyao Chen (Qingdao, China), Hongchao Wang (Qingdao, China) and Li Yuan (Qingdao, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The epitaxy sequentially includes from bottom to top a C-doped c-GaN high-resistance layer (11), an intrinsic u-GaN channel layer (12), an AlGaN barrier layer (13), a magnesium diffusion blocking layer (14), and a Mg-doped p...