US Patent Issued to FUZHOU UNIVERSITY on April 21 for "Growth method of high-temperature phase lanthanum borosilicate crystal and use" (Chinese Inventors)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,606,932, issued on April 21, was assigned to FUZHOU UNIVERSITY (Fuzhou City, China).

"Growth method of high-temperature phase lanthanum borosilicate crystal and use" was invented by Lingyun Li (Fuzhou City, China), Yi Shi (Fuzhou City, China), Fazheng Huang (Fuzhou City, China), Ziwei Zhou (Fuzhou City, China), Xinxu Li (Fuzhou City, China) and Yan Yu (Fuzhou City, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a growth method of a high-temperature phase lanthanum borosilicate crystal, where the high-temperature phase lanthanum borosilicate crystal is a Beta-La1-yLnyBSiO5 crystal prepared by a high-temperature flux...