US Patent Issued to FUJIMI on July 28 for "Polishing composition, production method of polishing composition, polishing method, and manufacturing method of semiconductor substrate" (Japanese Inventor)

ALEXANDRIA, Va., July 28 -- United States Patent no. 12,692,414, issued on July 28, was assigned to FUJIMI Inc. (Aichi, Japan).

"Polishing composition, production method of polishing composition, polishing method, and manufacturing method of semiconductor substrate" was invented by Ryota Mae (Aichi, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A polishing composition capable of increasing a polishing selectivity ratio of SiOC to silicon nitride, a production method of the polishing composition, a polishing method, and a manufacturing method of a semiconductor substrate are provided.The polishing composition contains abrasives having a zeta potential of -5 mV or less, a cationic surfactant, a phosphon...