US Patent Issued to FUJIMI on July 28 for "Composition for surface treatment, surface treatment method, and method for producing semiconductor substrate" (Japanese Inventor)

ALEXANDRIA, Va., July 28 -- United States Patent no. 12,692,459, issued on July 28, was assigned to FUJIMI Inc. (Aichi, Japan).

"Composition for surface treatment, surface treatment method, and method for producing semiconductor substrate" was invented by Tsutomu Yoshino (Aichi, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Means capable of sufficiently removing residues remaining on a surface of a polished object containing silicon nitride and at least one selected from the group consisting of silicon oxide and polysilicon is provided. A composition for surface treatment, comprising: a nitrogen-free nonionic polymer, a nitrogen-containing nonionic polymer, and an anionic polymer, wherein the nitrogen...