ALEXANDRIA, Va., Sept. 24 -- United States Patent no. 12,745,567, issued on Sept. 22, was assigned to FUJIFILM Corp. (Tokyo).

"Piezoelectric element and manufacturing method for piezoelectric element" was invented by Fumihiko Mochizuki (Kanagawa, Japan), Seigo Nakamura (Kanagawa, Japan) and Hiroyuki Kobayashi (Kanagawa, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The piezoelectric element is a piezoelectric element including, on a substrate in the following order, a lower electrode layer, a piezoelectric film containing a perovskite-type oxide as a main component, and an upper electrode layer, in which at least a region of the upper electrode layer closest to a side of the piezoelectric film is comp...